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Home > english-chinese > "gate dielectric" in Chinese

Chinese translation for "gate dielectric"

栅极绝缘层

Related Translations:
dielectric capacity:  电容率介电容量
complex dielectric:  复合电介质
dielectric constant:  介电常数,介电恒量,电容率。
dielectric cylinder:  介电圆柱体
inorganic dielectric:  无机电介质
dielectric thawing:  电介质加热解冻
dielectric bonding:  介电焊接
dielectric breakdown:  电介质崩溃电介质哗电介质击穿介电击穿介质破坏绝缘哗
dielectric permeability:  介电渗透率
interlevel dielectric:  夹层电介质
Example Sentences:
1.Research progress in electrical properties of high - k hfo2 gate dielectric films
2栅介质材料电学特性的研究进展
2.Solving process of trap density and extracting of correlative parameters in thin gate dielectric
薄栅介质陷阱密度的求解和相关参数的提取
3.This dissertation presents a new characterization method of ultra - thin gate dielectric tddb
本文提出了超薄栅介质tddb效应的表征新方法。
4.In order to resolve the questions , a new high k material is developed instead of the traditional sio2 gate dielectric material to reduce the tunneling current
目前,正在利用介电常数较大的材料来代替传统的sio _ 2作为栅介材料,来减少隧穿电流。
5.The multi - layer model algorithm not only calculates the thickness of gate dielectric but also validates whether the model is proper . it has high practical merit to analyze the structure of gate dielectric
这种算法和软件的实现对于mos栅介质层的结构分析有很高的实用价值,对于微电子器件的结构研究有一定的推动作用。
6.Internal field generated by contact potential of gate electrode and substrate is considered to be responsible for the enhancement of c - v hysteresis . we first incorporate e - beam evaporation of hf with post thermal oxidation to fabricate hfo2 for the application of gate dielectrics
硅化物主要是由沉积过微溯博士裕文搏要程中hf和出的互扩散引起的,而热氧化可以将其转化成具有较高介电常数的硅氧化物hfxsiyo 。
7.Second , as an electronic thin film , tio _ ( 2 ) thin film has good insulatibity to be used as protection layers of large - scale integrated circuit ( lsi ) , and tio2 thin film also has high dielectric constant , which can be applied to gate dielectric of semiconductor device , mems and mos
作为电学膜, tio _ 2薄膜的绝缘性能好,可作为大规模集成电路的保护层。 tio _ 2的介电常数很高,可用于半导体器件mems 、 mos等的栅介质。
8.The la2o3 material was paid attention because of its good gate dielectric properties , but there are a lot of properties are under research , the most important property is thermal stability . to improve the situation the author has made the following research and achieved beneficial results
La _ 2o _ 3是一种新型的高介电常数的栅介材料,它的优良性能引起了微电子界的注意,但它的很多特性还有待于研究,其中最重要的是它的热稳定性和隧道电流。
9.With the research on hfoxny gate dielectrics , it can reduces leakage current and increase crystallizing point ; our research can help to realize the leakage current mechanism and silc effect of hfo2 , futher more it can offer us direction on optimize the fabrication process
结果表明,与hfo :相比,氮化的hfo :具有小的漏电流。我们的研究结果有助于进一步了解hro :栅介质的泄漏电流机制和silc效应的特征,为进一步优化hfo :高k栅介质的制备工艺提供指导。
10.Since metal - oxide - semiconductor ( mos ) device appeared , integration of integrated circuit ( ic ) expands as moore law . meanwhile the dimension of device scales down , the thickness of sio2 gate dielectric shrinks as the same law . but as the thickness of sio2 gate dielectric reaches at isa , the gate current rises very quickly and reaches at 1 10a / cm2
自从金属-氧化物-半导体( mos )器件出现以来,集成电路的集成度按照摩尔定律增加,相应地,器件的物理尺寸按照等比缩小的原则不断缩小, sio _ 2作为栅介质的厚度不断缩小,特征尺寸在0 . 1 m以下的集成电路要求sio _ 2栅介质的厚度小于1 . 7nm 。
Similar Words:
"gate delay" Chinese translation, "gate delay time" Chinese translation, "gate density" Chinese translation, "gate detector" Chinese translation, "gate diagram" Chinese translation, "gate digital" Chinese translation, "gate diode" Chinese translation, "gate diversion work" Chinese translation, "gate diversion works" Chinese translation, "gate dog" Chinese translation